NTE180 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Power Transistor High Power Audio Amplifier

NTE180 (PNP) & NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
D High DC Current Gain: h_FE = 25 – 100 @ I_C = 7.5A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W
Electrical Characteristics: (T_C =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V_(BR)CER I_C = 200mA, R_BE = 100Ω, Note 1 100 – – V
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 200mA, Note 1
90 – – V
Collector–Base Cutoff Current
I_CBO V_CB = 100V, I_E = 0
– – 1.0 mA
V_CB = 100V, I_E = 0, T_C = +150°C – – 5.0 mA
Emitter–Base Cutoff Current
I_EBO V_BE = 4V, I_C = 0
– – 1.0 mA
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.