NTE21256 Datasheet, PDF (1/6 Pages) NTE Electronics – 262,144-Bit Dynamic Random Access Memory (DRAM)

NTE21256
262,144–Bit Dynamic Random
Access Memory (DRAM)
Description:
The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory. This 5V–only component
is fabricated with N–channel silicon gate technology.
Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard
16–Lead DIP package. Features of this device include single power supply with ±10% tolerance, on–
chip address, date registers which eliminate the need for interface registers, and fully TTL compatible
inputs and outputs, including clocks.
In addition to the usual read, write, and read–modify–write cycles, the NTE21256 is capable of early
and late write cycles, RAS–only refresh, and hidden refresh. Common I/O capability is given by using
early write operation.
The NTE21256 also features page mode which allows high–speed random access of bits in the same
row.
Features:
D 262,144 x 1–Bit Organization
D Single +5V Supply, ±10% Tolerance
D Low Power Dissipation:
–385mW active (Max)
–28mW standby (Max)
D Access Time: 150ns
D Cycle Time: 260ns
D All Inputs and Outputs TTL Compatible
D On–Chip Substrate Bias Generator
D Three–State Data Output
D Read, Write, Read–Modify–Write, RAS–Only–Refresh, Hidden Refresh
D Common I/O Capability using “Early Write” Operation
D Page Mode Read and Write, Read–Write
D 256 Refresh Cycles with 4ms Refresh Period
Absolute Maximum Ratings: (Note 1)
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Voltage on any pin relative to V_SS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –1 to +7V
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Data Out Current (Short Circuit) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Note 1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.