BUK7511-55B Datasheet, PDF (9/16 Pages) NXP Semiconductors – TRENCHMOS-TM STANDARD LEVEL FET

Philips Semiconductors
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
100
ID
(A)
75
50
03nn39
10
VGS
(V)
8
6
4
03nn37
VDD = 14 V
VDD = 44 V
25
0
0
Tj = 175 °C
2
4
Tj = 25 °C
6
8
10
VGS (V)
2
0
0
10
20
30 _{QG (nC)} 40
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
100
IS
(A)
75
Tj = 175 °C
Tj = 25 °C
50
03nn36
25
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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