BUK7511-55B Datasheet, PDF (7/16 Pages) NXP Semiconductors – TRENCHMOS-TM STANDARD LEVEL FET

Philips Semiconductors
BUK75/76/7E11-55B
TrenchMOS™ standard level FET
300
ID
(A)
Label is VGS (V)
20
03nn41
14
30
RDSon
(mΩ)
03nn40
200
10
9
8.5
8
100
7.5
7
6.5
6
5.5
5
0
4.5
0
2
4
6
8
10
VDS (V)
20
10
0
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
30
03nn42
2
RDSon
6
6.5 7
Label is VGS (V)
a
(mΩ)
7.5
1.5
8
20
10
1
10
0.5
03ne89
0
0
60
T_j = 25 °C
120 _{ID (A)} 180
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12053
Product data
Rev. 02 — 11 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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