MNLMH6628-X-RH Datasheet, PDF (6/12 Pages) National Semiconductor (TI) – DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd (si) TESTED TO MIL-STD-883, METHOD 1019

MNLMH6628-X-RH REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: " Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as
specified on the Internal Processing Instructions (IPI).
SYMBOL
Ib
PARAMETER
Input Bias
Current
CONDITIONS
NOTES
1
PIN-
NAME
MIN
-1.0
MAX
+1.0
UNIT
uA
SUB-
GROUPS
1
Vio
Input Offset
Voltage
1
-0.2 +0.2 mV 1
Icc
Supply Current
Rl = Infinity
1
-1
+1
mA 1
Note 1:
Note 2:
Note 3:
If not tested, shall be guaranteed to the limits specified in table 1.
Group A testing only.
Pre and post irradiation limits are identical to those listed under electrical
characteristics. These parts may be dose rate sensitive in a space environment and
demonstrate enhanced low dose rate effect. Radiation end point limits for the noted
parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method
1019.
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