CD4066BM Datasheet, PDF (6/8 Pages) National Semiconductor (TI) – Quad Bilateral Switch

Typical Performance Characteristics
‘‘ON’’ Resistance vs Signal
Voltage for T_Ae25 C
‘‘ON’’ Resistance as a Function
of Temperature for
V_DDbV_SSe15V
‘‘ON’’ Resistance as a Function
of Temperature for
V_DDbV_SSe10V
‘‘ON’’ Resistance as a Function
of Temperature for
V_DDbV_SSe5V
Special Considerations
In applications where separate power sources are used to
drive V_DD and the signal input the V_DD current capability
should exceed V_DD R_L (R_Leeffective external load of the 4
CD4066BM CD4066BC bilateral switches) This provision
avoids any permanent current flow or clamp action of the
V_DD supply when power is applied or removed from
CD4066BM CD4066BC
In certain applications the external load-resistor current
may include both V_DD and signal-line components To avoid
TL F 5665 – 4
drawing V_DD current when switch current flows into termi-
nals 1 4 8 or 11 the voltage drop across the bidirectional
switch must not exceed 0 6V at T_A^s25 C or 0 4V at
T_A^l25 C (calculated from R_ON values shown)
No V_DD current will flow through R_L if the switch current
flows into terminals 2 3 9 or 10
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