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CD4066BM Datasheet, PDF (3/8 Pages) National Semiconductor (TI) – Quad Bilateral Switch
DC Electrical Characteristics (Continued) CD4066BC (Note 2)
Symbol
Parameter
Conditions
b40 C
a25 C
a85 C
Units
Min Max Min Typ Max Min Max
SIGNAL INPUTS AND OUTPUTS
RON
‘‘ON’’ Resistance
DRON
D‘‘ON’’ Resistance
Between Any 2 of
4 Switches
IIS
Input or Output Leakage
Switch ‘‘OFF’’
RLe10
kX
to
VDDbVSS
2
VCeVDD VSS to VDD
VDDe5V
VDDe10V
VDDe15V
RLe10
kX
to
VDDbVSS
2
VCCeVDD VISeVSS to VDD
VDDe10V
VDDe15V
VCe0
850
330
210
g50
270 1050
120 400
80
240
1200 X
520 X
300 X
10
5
g0 1
g50
X
X
g200 nA
CONTROL INPUTS
VILC
VIHC
IIN
Low Level Input Voltage
High Level Input Voltage
Input Current
VISeVSS and VDD
VOSeVDD and VSS
IISe g10mA
VDDe5V
VDDe10V
VDDe15V
VDDe5V
VDDe10V (See note 6)
VDDe15V
VDDbVSSe15V
VDDtVIStVSS
VDDtVCtVSS
15
2 25 1 5
15
V
30
45
30
30
V
40
6 75 4 0
40
V
35
3 5 2 75
35
V
70
70 55
70
V
11 0
11 0 8 25
11 0
V
g0 3
g10b5 g0 3
g1 0 mA
AC Electrical Characteristics TAe25 C tretfe20 ns and VSSe0V unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max
tPHL tPLH
tPZH tPZL
tPHZ tPLZ
Propagation Delay Time Signal
Input to Signal Output
Propagation Delay Time
Control Input to Signal
Output High Impedance to
Logical Level
Propagation Delay Time
Control Input to Signal
Output Logical Level to
High Impedance
Sine Wave Distortion
Frequency Response-Switch
‘‘ON’’ (Frequency at b3 dB)
VCeVDD CLe50 pF (Figure 1 )
RLe200k
VDDe5V
VDDe10V
VDDe15V
RLe1 0 kX CLe50 pF (Figures 2 and 3 )
VDDe5V
VDDe10V
VDDe15V
RLe1 0 kX CLe50 pF (Figures 2 and 3 )
VDDe5V
VDDe10V
VDDe15V
VCeVDDe5V VSSeb5V
RLe10 kX VISe5Vp-p fe1 kHz
(Figure 4 )
VCeVDDe5V VSSeb5V
RLe1 kX VISe5Vp-p
20 Log10 VOS VOS (1 kHz)bdB
(Figure 4 )
25
55
15
35
10
25
125
60
50
125
60
50
01
40
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
%
MHz
3