LMX3160 Datasheet, PDF (5/16 Pages) National Semiconductor (TI) – Single Chip Radio Transceiver

Electrical Characteristics The following specifications are guaranteed over the recommended operating condi-
tions unless otherwise specified (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF AMPLIFIER
NF
Noise Figure
f_IN e 120 MHz
6
8
dB
Av
Gain
20
25
dB
OIP3
Output Intercept Point
6
7
dBm
Z_IN
Z_OUT
IF LIMITER
Input Impedance
Output Impedance
NF
IF Limiter Noise Figure
f_IN e 120 MHz
200
X
200
X
10
12
dB
Av
Limiter Gain
55
60
dB
Sens
Limiter Disc Sensitivity
BER e 10^b3
b65
dBm
IF_IN
IF_OUT
V_max
IF Limiter Input Impedance
IF Limiter Output Impedance
Maximum Input Voltage Level
200
1000
500
X
X
mV_PP
V_OUT
Output Swing
500
mV_PP
Dynamic Range
60
dB
DISCRIMINATOR
V_OUT
V_OS
DISC_OUT
RSSI
Discriminator Output Peak to Peak Voltage
Disc Output DC Voltage
Disc Output Impedance
RSSI
RSSI Dynamic Range
f_IN e 120 MHz
f_IN e 120 MHz
250
400
mV
14
17
V
150
X
70
80
dB
RSSI_OUT RSSI Output Voltage
Pin e b85 dBm
Pin e 0 dBm
01
0 25
04
V
1 15
15
18
V
RSSI Slope
Pin e b75 to b25 dBm
11
20
mV dB
RSSI Linearity
3
dB
FREQUENCY DOUBLER
f_IN
Input Frequency Range
V_IN
Input Signal Level
Z_o
Output Impedance
Fundamental Rejection (Note 3)
f_OUT e 1 89 GHz
Z_IN e 200X
V_IN e 450 mV_PP
885
950
b14 b11 5 b9
45
60
80
30
MHz
dBm
X
dB
P_OUT
Harmonic Suppression (Note 3)
Output Power
V_IN e 450 mV_PP
20
b10
b8
dB
dBm
5