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THS4524-EP Datasheet, PDF (4/48 Pages) Texas Instruments – VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER
THS4524-EP
SBOS609A – JUNE 2012 – REVISED AUGUST 2013
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THERMAL INFORMATION
THERMAL METRIC(1)
THS4524
DBT
UNITS
θJA
θJCtop
θJB
ψJT
ψJB
θJCbot
Junction-to-ambient thermal resistance(2)
Junction-to-case (top) thermal resistance(3)
Junction-to-board thermal resistance(4)
Junction-to-top characterization parameter(5)
Junction-to-board characterization parameter(6)
Junction-to-case (bottom) thermal resistance(7)
38 PINS
106.9
59.8
66.5
17.1
66.1
N/A
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
ELECTRICAL CHARACTERISTICS: VS+ – VS– = 3.3 V
At VS+ = +3.3 V, VS– = 0 V, VOCM = open, VOUT = 2 VPP (differential), RL = 1 kΩ differential, G = 1 V/V, single-ended input,
differential output, and input and output referenced to midsupply, unless otherwise noted.
PARAMETER
CONDITIONS
TA = -55°C to 125°C
MIN
TYP
MAX
UNIT
TEST
LEVEL (1)
AC PERFORMANCE
Small-Signal Bandwidth
Gain Bandwidth Product
Large-Signal Bandwidth
Bandwidth for 0.1-dB Flatness
Rising Slew Rate (Differential)
Falling Slew Rate (Differential)
Overshoot
Undershoot
Rise Time
Fall Time
Settling Time to 1%
Harmonic Distortion
2nd harmonic
VOUT = 100 mVPP, G = 1
VOUT = 100 mVPP, G = 2
VOUT = 100 mVPP, G = 5
VOUT = 100 mVPP, G = 10
VOUT = 100 mVPP, G = 10
VOUT = 2 VPP, G = 1
VOUT = 2 VPP, G = 1
VOUT = 2-V Step, G = 1, RL = 200 Ω
VOUT = 2-V Step, G = 1, RL = 200 Ω
VOUT = 2-V Step, G = 1, RL = 200 Ω
VOUT = 2-V Step, G = 1, RL = 200 Ω
VOUT = 2-V Step, G = 1, RL = 200 Ω
VOUT = 2-V Step, G = 1, RL = 200 Ω
VOUT = 2-V Step, G = 1, RL = 200 Ω
f = 1 kHz, VOUT = 1 VRMS, G = 1(2),
differential input
135
49
18.6
9.3
93
95
20
420
460
1.2
2.1
4
3.5
13
–122
MHz
C
MHz
C
MHz
C
MHz
C
MHz
C
MHz
C
MHz
C
V/μs
C
V/μs
C
%
C
%
C
ns
C
ns
C
ns
C
dBc
C
3rd harmonic
f = 1 MHz, VOUT = 2 VPP, G = 1
f = 1 kHz, VOUT = 1 VRMS, G = 1(2),
differential input
–85
–141
dBc
C
dBc
C
Second-Order Intermodulation Distortion
f = 1 MHz, VOUT = 2 VPP, G = 1
Two-tone, f1 = 2 MHz, f2 = 2.2 MHz,
VOUT = 2-VPP envelope
–90
dBc
C
–83
dBc
C
(1) Test levels: (A) 100% tested. (B) Limits set by characterization and simulation. (C) Typical value only for information.
(2) Not directly measureable; calculated using noise gain of 101 as described in the Applications section, Audio Performance.
4
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