LMD18200_05 Datasheet, PDF(4/14 Page) National Semiconductor (TI)

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LMD18200_05 Datasheet, PDF (4/14 Pages) National Semiconductor (TI) – 3A, 55V H-Bridge

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Electrical Characteristics Notes

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating

the device beyond its rated operating conditions.

Note 2: See Application Information for details regarding current limiting.

Note 3: The maximum power dissipation must be derated at elevated temperatures and is a function of TJ(max), Î¸JA, and TA. The maximum allowable power

dissipation at any temperature is PD(max) = (TJ(max) â TA)/Î¸JA, or the number given in the Absolute Ratings, whichever is lower. The typical thermal resistance from

junction to case (Î¸JC) is 1.0ËC/W and from junction to ambient (Î¸JA) is 30ËC/W. For guaranteed operation TJ(max) = 125ËC.

Note 4: Human-body model, 100 pF discharged through a 1.5 kâ¦ resistor. Except Bootstrap pins (pins 1 and 11) which are protected to 1000V of ESD.

Note 5: All limits are 100% production tested at 25ËC. Temperature extreme limits are guaranteed via correlation using accepted SQC (Statistical Quality Control)

methods. All limits are used to calculate AOQL, (Average Outgoing Quality Level).

Note 6: Output currents are pulsed (tW < 2 ms, Duty Cycle < 5%).

Note 7: Regulation is calculated relative to the current sense output value with a 1A load.

Note 8: Selections for tighter tolerance are available. Contact factory.

Typical Performance Characteristics

VSAT vs Flag Current

RDS(ON) vs Temperature

RDS(ON) vs

Supply Voltage

01056816

Supply Current vs

Supply Voltage

01056817

01056818

01056819

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