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ADC0831 Datasheet, PDF (4/33 Pages) National Semiconductor (TI) – 8-Bit Serial I/O A/D Converters with Multiplexer Options | |||
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Absolute Maximum Ratings (Notes 1,
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Current into V+ (Note 3)
Supply Voltage, VCC (Note 3)
Voltage
Logic Inputs
Analog Inputs
Input Current per Pin (Note 4)
Package
15 mA
6.5V
â0.3V to VCC +
0.3V
â0.3V to VCC +
0.3V
±5 mA
±20 mA
Storage Temperature
Package Dissipation
at TA=25ËC (Board Mount)
Lead Temperature (Soldering 10
sec.)
â65ËC to +150ËC
0.8W
Dual-In-Line Package (Plastic)
Molded Chip Carrier Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
ESD Susceptibility (Note 5)
260ËC
215ËC
220ËC
2000V
Operating Ratings (Notes 1, 2)
Supply Voltage, VCC
Temperature Range
ADC0832/8CIWM
ADC0834BCN,
ADC0838BCV,
ADC0831/2/4/8CCN,
ADC0838CCV,
ADC0831/2/4/8CCWM
4.5 VDC to 6.3 VDC
TMINâ¤TAâ¤TMAX
â40ËC to +85ËC
0ËC to +70ËC
Converter and Multiplexer Electrical Characteristics The following specifications apply for
VCC = V+ = VREF = 5V, VREF ⤠VCC +0.1V, TA = Tj = 25ËC, and fCLK = 250 kHz unless otherwise specified. Boldface limits
apply from TMIN to TMAX.
Conditions
CIWM Devices
BCV, CCV, CCWM, BCN
and CCN Devices
Parameter
Typ
Tested Design Typ
Tested Design
(Note 12) Limit
Limit (Note 12) Limit
Limit
(Note 13) (Note 14)
(Note 13) (Note 14)
CONVERTER AND MULTIPLEXER CHARACTERISTICS
Total Unadjusted Error
ADC0838BCV
VREF=5.00 V
(Note 6)
±1â2
±1â2
ADC0834BCN
±1â2
±1â2
ADC0838CCV
±1
±1
ADC0831/2/4/8CCN
±1
±1
ADC0831/2/4/8CCWM
±1
±1
ADC0832/8CIWM
±1
Minimum Reference
3.5
1.3
3.5
1.3
1.3
Input Resistance (Note 7)
Maximum Reference
3.5
5.9
3.5
5.4
5.9
Input Resistance (Note 7)
Maximum Common-Mode
Input Range (Note 8)
VCC +0.05
VCC +0.05 VCC+0.05
Minimum Common-Mode
GND â0.05
GND â0.05 GNDâ0.05
Input Range (Note 8)
DC Common-Mode Error
±1/16
±1â4
±1/16
±1â4
±1â4
Change in zero
15 mA into V+
error from VCC=5V
VCC=N.C.
to internal zener
VREF=5V
operation (Note 3)
1
1
1
VZ, internal
MIN 15 mA into V+
6.3
diode breakdown
MAX
8.5
6.3
6.3
8.5
8.5
(at V+) (Note 3)
Units
LSB
(Max)
kâ¦
kâ¦
V
V
LSB
LSB
V
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