THS4151 Datasheet, PDF (3/35 Pages) National Semiconductor (TI) – HIGH-SPEED DIFFERENTIAL I/O AMPLIFIERS

THS4150
THS4151
www.ti.com........................................................................................................................................................... SLOS321G – MAY 2000 – REVISED MARCH 2009
PACKAGE
D
DGN
DGK
DISSIPATION RATING TABLE
θ_JA ⁽¹⁾
(°C/W)
97.5
θ_JC
(°C/W)
38.3
POWER RATING⁽²⁾
T_A = 25°C
1.02 W
T_A = 85°C
410 mW
58.4
4.7
1.71 W
685 mW
260
54.2
385 mW
154 mW
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion
starts to substantially increase. Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance and long term reliability.
RECOMMENDED OPERATING CONDITIONS
V_CC+ to
V_CC–
T_A
Supply voltage
Operating free-air temperature
Dual supply
Single supply
C suffix
I suffix
MIN TYP
±2.5
5
0
–40
MAX
±15
30
70
85
UNIT
V
°C
ELECTRICAL CHARACTERISTICS
At V_CC = 15 V, R_L = 800 Ω, T_A = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
DYNAMIC PERFORMANCE
BW
Small-signal bandwidth (–3 dB)
BW
Small-signal bandwidth (–3 dB)
SR
Slew rate⁽¹⁾
Settling time to 0.1%
t_s
Settling time to 0.01%
V_CC = 5
V_CC = ±5
V_CC = ±15
V_CC = 5
V_CC = ±5
V_CC = ±15
V_CC = ±15,
Gain = 1,
R_f = 390 Ω
Gain = 2,
R_f = 750 Ω
Gain = 1
Differential step voltage = 2 V_PP,
Gain = 1
DISTORTION PERFORMANCE
THD
Total harmonic distortion
Differential input, differential output Gain = 1,
R_f = 390 Ω, R_L = 800 Ω, V_O= 2 V_PP
V_CC = 5
V_CC = ±5
V_CC = ±15
f = 1 MHz
f = 8 MHz
f = 1 MHz
f = 8 MHz
f = 1 MHz
f = 8 MHz
Spurious free dynamic range (SFDR)
Third intermodulation distortion
V_O = 2 V_PP, f = 1 MHz
V_O = 0.14 V_RMS, Gain = 1,
f = 20 MHz
NOISE PERFORMANCE
V_n
Input voltage noise
I_n
Input current noise
f > 10 kHz
f > 10 kHz
(1) Slew rate is measured from an output level range of 25% to 75%.
MIN
TYP MAX UNIT
150
150
MHz
150
80
81
MHz
81
650
V/µs
53
ns
247
–85
–66
–83
dB
–65
–84
–65
–87
dB
–95
dBc
7.6
nV/√Hz
1.78
pA/√Hz
Copyright © 2000–2009, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Link(s): THS4150 THS4151