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THS4151 Datasheet, PDF (2/35 Pages) National Semiconductor (TI) – HIGH-SPEED DIFFERENTIAL I/O AMPLIFIERS
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THS4150
THS4151
SLOS321G – MAY 2000 – REVISED MARCH 2009........................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS(1)
TA
0°C to 70°C
–40°C to 85°C
SMALL OUTLINE(D)
THS4150CD
THS4151CD
THS4150ID
THS4151ID
PACKAGED DEVICES
MSOP PowerPAD™
(DGN)
SYMBOL
THS4150CDGN
AQB
THS4151CDGN
AQD
THS4150IDGN
AQC
THS4151IDGN
AQE
MSOP
(DGK)
THS4150CDGK
THS4151CDGK
THS4150IDGK
THS4151IDGK
SYMBOL
ATT
ATU
AST
ASU
EVALUATION
MODULES
THS4150EVM
THS4151EVM
–
–
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range (unless otherwise noted).
VCC- to
VCC+
VI
IO
VID
TJ
TA
Tstg
Supply voltage
Input voltage
Output current(2)
Differential input voltage
Continuous total power dissipation
Maximum junction temperature(3)
Maximum junction temperature, continuous operation, long term reliability(4)
Operating free-air temperature
C suffix
I suffix
Storage temperature
Lead temperature (5)
HBM
ESD ratings
CDM
MM
UNIT
±16.5 V
±VCC
150 mA
±6 V
See Dissipation Rating Table
150°C
125°C
0°C to 70°C
–40°C to 85°C
–65°C to 150°C
2500 V
1500 V
200 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The THS415x may incorporate a PowerPad™ on the underside of the chip. This acts as a heatsink and must be connected to a
thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about utilizing the
PowerPad™ thermally enhanced package.
(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
(5) See the MSL/Reflow Rating information provided with the material, or see TI's web site at www.ti.com for the latest information.
2
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