MNLMH6624-X Datasheet, PDF (3/12 Pages) National Semiconductor (TI) – ULTRA LOW NOISE WIDEBAND OP AMP

MNLMH6624-X REV 1A0
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (Vs)
Common Mode Input Voltage (Vcm)
Differential Input Voltage (Vin)
Maximum Power Dissipation (Pd)
(Note 2)
Lead Temperature
(Soldering, 10 seconds)
Junction Temperature (Tj)
Storage Temperature Range
Thermal Resistance
ThetaJa
Junction-to-ambient
CERAMIC DIP
(Still Air Flow)
(500LF/Min Air Flow)
CERAMIC SOIC
(Still Air Flow)
(500LF/Min Air Flow)
ThetaJC
CERAMIC DIP
CERAMIC SOIC
Package Weight
(Typical)
CERAMIC DIP
CERAMIC SOIC
ESD Tolerance
(Note 3)
ESD Rating
+6 Vdc
V+ - V-
+1.2V
1.0W
+300 C
+175 C
-65 C < Ta < +150 C
130 C/W
70 C/W
180 C/W
115 C/W
17 C/W
20 C/W
1090mg
220mg
2000 V
Note 1:
Note 2:
Note 3:
Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated within the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA) / ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Human body model, 100 pF discharged through 1.5K Ohms.
3