MN54ABT64 Datasheet, PDF (3/9 Pages) National Semiconductor (TI) – MN54ABT646-X REV 0B0

MN54ABT646-X REV 0B0
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Vcc Pin Potential to Ground Potential
Input Voltage
(Note 2)
Input Current
(Note 2)
Voltage Applied To Any Output
In the Disabled or Power-Off State
In The High State
Current Applied To Output
In The Low State (Max)
Junction Temperature (Tj)
Ceramic
Thermal Resistance
Junction-To-Case (Theta JC)
Storage Temperature
Lead Temperature
(Soldering, 10 seconds)
ESD Classification
Maximum Power Dissipation
-0.5V to +7.0V
-0.5V to +7.0V
-30mA to +5.0mA
-0.5V to 5.5V
-0.5V to Vcc
96mA
+175C
See Mil-Std 1835
-65C to +150C
+300C
Class 3
500 mW
Note 1:
Note 2:
Absolute maximum ratings are values beyond which the device may be damaged or have
its useful life impaired. Functional operation under these conditions is not
implied.
Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Supply Voltage (Vcc)
Operating Temperature
Minimum Input Edge Rate (dV/dt)
Data Input
Enable Input
Clock Input
Maximum Output Current
High Level (Ioh)
Low Level (Iol)
4.5V to 5.5V
-55C to +125C
50 mV/ns
20 mV/ns
100 mV/ns
-24 mA
48 mA
3