LP38855 Datasheet, PDF (3/14 Pages) National Semiconductor (TI) – 1.5A Fast-Response High-Accuracy LDO Linear Regulator with Enable

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature Range
Lead Temperature
Soldering, 5 seconds
ESD Rating
Human Body Model (Note 2)
Power Dissipation (Note 3)
V_IN Supply Voltage (Survival)
V_BIAS Supply Voltage (Survival)
−65°C to +150°C
260°C
±2 kV
Internally Limited
−0.3V to +6.0V
−0.3V to +6.0V
V_EN Voltage (Survival)
V_OUT Voltage (Survival)
I_OUT Current (Survival)
Junction Temperature
−0.3V to +6.0V
−0.3V to +6.0V
Internally Limited
−40°C to +150°C
Operating Ratings (Note 1)
V_IN Supply Voltage
V_BIAS Supply Voltage
V_EN Enable Input Voltage
I_OUT
Junction Temperature Range
(Note 3)
(V_OUT + V_DO) to V_BIAS
3.0V to 5.5V
0.0V to V_BIAS
0 mA to 1.5A
−40°C to +125°C
Electrical Characteristics Unless otherwise specified: V_IN = V_OUT(NOM) + 1V, V_BIAS = 3.0V, I_OUT = 10 mA, C_IN =
C_OUT = 10 µF, C_BIAS = 1µF, V_EN = V_BIAS. Limits in standard type are for T_J = 25°C only; limits in boldface type apply over the
junction temperature (T_J) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical
correlation. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only.
Symbol
Parameter
Conditions
MIN
TYP
MAX
Units
V_OUT
Output Voltage Tolerance
ΔV_OUT/ΔV_IN
Line Regulation, V_IN
(Note 4)
V_OUT(NOM) + 1V ≤ V_IN ≤ V_BIAS,
3.0V ≤ V_BIAS ≤ 5.5V,
10 mA ≤ I_OUT ≤ 1.5A
V_OUT(NOM) + 1V ≤ V_IN ≤ V_BIAS,
3.0V ≤ V_BIAS ≤ 5.5V,
10 mA ≤ I_OUT ≤ 1.5A,
0°C ≤ T_J ≤ 125°C
V_OUT(NOM) + 1V ≤ V_IN ≤ V_BIAS
-1.0
0
+1.0
-3.0
+3.0
%
-2.0
0
+2.0
-
0.04
-
%/V
ΔV_OUT/ΔV_BIAS
Line Regulation, V_BIAS
(Note 4)
3.0V ≤ V_BIAS ≤ 5.5V
-
0.10
-
%/V
Output Voltage Load Regulation
ΔV_OUT/ΔI_{OUT (Note 5)}
10 mA ≤ I_OUT ≤ 1.5A
-
0.2
-
%/A
Dropout Voltage
V_DO
V_IN − V_OUT
(Note 6)
I_OUT = 1.5A
-
130
165
mV
180
I_GND(IN)
Ground Pin Current Drawn from
V_IN Supply
LP38855-0.8
10 mA ≤ I_OUT ≤ 1.5A
LP38855-1.2
10 mA ≤ I_OUT ≤ 1.5A
V_EN ≤ 0.5V
-
7.0
8.5
9.0
mA
-
11
12
15
-
1.0
10
300
µA
I_GND(BIAS)
Ground Pin Current Drawn from
V_BIAS Supply
10 mA ≤ I_OUT ≤ 1.5A
V_EN ≤ 0.5V
-
3.0
3.8
mA
4.5
-
100
170
µA
200
UVLO
Under-Voltage Lock-Out
Threshold
V_BIAS rising until device is
functional
2.20
2.00
2.45
2.70
2.90
V
UVLO_(HYS)
Under-Voltage Lock-Out
Hysteresis
V_BIAS falling from UVLO threshold
60
150
300
mV
until device is non-functional
50
350
I_SC
Output Short-Circuit Current
V_IN = V_OUT(NOM) + 1V,
V_BIAS = 3.0V, V_OUT = 0.0V
-
4.5
-
A
3
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