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LMH6645 Datasheet, PDF (3/28 Pages) National Semiconductor (TI) – 2.7V, 650μA, 55MHz, Rail-to-Rail Input and Output Amplifiers with Shutdown Option
LMH6645, LMH6646, LMH6647
www.ti.com
SNOS970C – JUNE 2001 – REVISED APRIL 2013
2.7V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 2.7V, V− = 0V, VCM = VO = V+/2, and Rf = 2kΩ, and RL
= 1kΩ to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(1)
(2)
(1)
BW
en
in
CT Rej.
SR
TON
TOFF
THSD
ISD
VOS
TC VOS
IB
IOS
RIN
CIN
CMVR
−3dB BW
Input-Referred Voltage Noise
Input-Referred Current Noise
Cross-Talk Rejection (LMH6646
only)
Slew Rate
Turn-On Time
(LMH6647 only)
Turn-Off Time
(LMH6647 only)
Shutdown Threshold (LMH6647
only)
Shutdown Pin Input Current
(LMH6647 only)
Input Offset Voltage
AV = +1, VOUT = 200mVPP,
VCM = 0.7V
f = 100kHz
f = 1kHz
f = 100kHz
f = 1kHz
f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
AV = −1, VO = 2VPP
See (3), (4)
IS ≤ 50μA
See (5)
0V ≤ VCM ≤ 2.7V
Input Offset Average Drift
Input Bias Current
See (6)
VCM = 2.5V (5)
VCM = 0.5V (5)
Input Offset Current
Common Mode Input Resistance
Common Mode Input
Capacitance
Input Common-Mode Voltage
Range
0V ≤ VCM ≤ 2.7V
CMRR ≥ 50dB
CMRR
AVOL
VO
Common Mode Rejection Ratio
Large Signal Voltage Gain
Output Swing
High
Output Swing
Low
VCM Stepped from 0V to 2.7V
VCM Stepped from 0V to 1.55V
VO = 0.35V to 2.35V
RL = 1k to V+/2
RL = 10k to V+/2
RL = 1k to V+/2
RL = 10k to V+/2
40
55
MHz
17
nV/√Hz
25
0.75
pA/√Hz
1.20
47
dB
15
22
V/μs
250
ns
560
ns
1.95
2.30
V
−20
μA
−3
±1
−4
3
mV
4
±5
μV/°C
0.40
2
2.2
μA
−0.68
−2
−2.2
1
500
nA
3
MΩ
2
pF
−0.5
−0.3
−0.1
V
3.0
3.2
2.8
46
77
dB
58
76
76
87
dB
74
2.55
2.66
V
2.68
40
150
mV
20
(1) All limits are guaranteed by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Guaranteed based on characterization only.
(5) Positive current corresponds to current flowing into the device.
(6) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Copyright © 2001–2013, Texas Instruments Incorporated
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