LM3475 Datasheet, PDF (3/14 Pages) National Semiconductor (TI) – Hysteretic PFET Buck Controller

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V_IN
PGATE
FB
EN
Storage Temperature
Power Dissipation (Note 2)
ESD Susceptibilty
Human Body Model (Note 3)
−0.3V to 16V
−0.3V to 16V
−0.3V to 5V
−0.3V to 16V
−65˚C to 150˚C
440mW
2.5kV
Lead Temperature
Vapor Phase (60 sec.)
Infared (15 sec.)
215˚C
220˚C
Operating Ratings (Note 1)
Supply Voltage
Operating Junction
Temperature
2.7V to 10V
−40˚C to +125˚C
Electrical Characteristics
Specifications in Standard type face are for T_J = 25˚C, and in bold type face apply over the full Operating Temperature
Range (T_J = −40˚C to +125˚C). Unless otherwise specified, V_IN = EN = 5.0V. Datasheet min/max specification limits are guar-
anteed by design, test, or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I_Q
Quiescent Current
EN = V_IN (PGATE
170
260
320
Open)
µA
EN = 0V
4
7
10
V_FB
Feedback Voltage
0.788
0.8
0.812
V
%∆V_FB/∆V_IN
Feedback Voltage
Line Regulation
2.7V < V_IN < 10V
0.01
%/V
V_HYST
Comparator
Hysteresis
2.7V < V_IN < 10V
−40˚C to +125˚C
21
28
mV
21
32
I_FB
Vth_EN
FB Bias Current
Enable Threshold
Voltage
Hysteresis
Increasing
50
600
nA
1.2
1.5
1.8
V
365
mV
I_EN
Enable Leakage
EN = 10V
Current
.025
1
µA
Source
2.8
R_PGATE
Driver Resistance
I_SOURCE = 100mA
Sink
Ω
1.8
I_Sink = 100mA
Source
I_PGATE
Driver Output Current
V_PGATE = 3.5V
C_PGATE = 1nF
Sink
0.475
A
V_PGATE = 3.5V
1.0
C_PGATE = 1nF
T_SS
Soft-Start Time
2.7V < V_IN < 10V
(EN Rising)
4
ms
T_ONMIN
Minimum On-Time
PGATE Open
180
ns
V_UVD
Under Voltage
Detection
Measured at the FB
0.487
0.56
0.613
V
Pin
3
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