DS90C031B_01 Datasheet, PDF (3/11 Pages) National Semiconductor (TI) – LVDS Quad CMOS Differential Line Driver

Switching Characteristics (Continued)
V_CC = +5.0V, T_A = +25˚C (Notes 3, 6, 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t_TLH
Rise Time
t_THL
Fall Time
t_PHZ
Disable Time High to Z
t_PLZ
Disable Time Low to Z
t_PZH
Enable Time Z to High
t_PZL
Enable Time Z to Low
R_L = 100Ω, C_L = 5 pF
(Figure 4 and Figure 5)
0.35
1.5
ns
0.35
1.5
ns
2.5
10
ns
2.5
10
ns
2.5
10
ns
2.5
10
ns
Switching Characteristics
V_CC = +5.0V ± 10%, T_A = −40˚C to +85˚C (Notes 3, 6, 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t_PHLD
Differential Propagation Delay High to Low
R_L = 100Ω, C_L = 5 pF
0.5
2.0
3.5
ns
t_PLHD
Differential Propagation Delay Low to High
(Figure 2 and Figure 3)
0.5
2.1
3.5
ns
t_SKD
Differential Skew |t_PHLD – t_PLHD|
0
80
900
ps
t_SK1
Channel-to-Channel Skew (Note 4)
0
0.3
1.0
ns
t_SK2
Chip to Chip Skew (Note 5)
3.0
ns
t_TLH
Rise Time
0.35
2.0
ns
t_THL
Fall Time
t_PHZ
Disable Time High to Z
t_PLZ
Disable Time Low to Z
t_PZH
Enable Time Z to High
t_PZL
Enable Time Z to Low
R_L = 100Ω, C_L = 5 pF
(Figure 4 and Figure 5)
0.35
2.0
ns
2.5
15
ns
2.5
15
ns
2.5
15
ns
2.5
15
ns
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except: V_OD1 and
∆V_OD1.
Note 3: All typicals are given for: V_CC = +5.0V, T_A = +25˚C.
Note 4: Channel-to-Channel Skew is defined as the difference between the propagation delay of the channel and the other channels in the same chip with an event
on the inputs.
Note 5: Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays.
Note 6: Generator waveform for all tests unless otherwise specified: f = 1 MHz, Z_O = 50Ω, t_r ≤ 6 ns, and t_f ≤ 6 ns.
Note 7: ESD Ratings:
HBM (1.5 kΩ, 100 pF) ≥ 2kV
EIAJ (0Ω, 200 pF) ≥ 250V
Note 8: Output short circuit current (I_OS) is specified as magnitude only, minus sign indicates direction only.
Note 9: C_L includes probe and jig capacitance.
Parameter Measurement Information
FIGURE 1. Driver V_OD and V_OS Test Circuit
10098903
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