THS7530 Datasheet, PDF (2/24 Pages) Texas Instruments – HIGH-SPEED, FULLY DIFFERENTIAL, CONTINUOUSLY VARIABLE GAIN AMPLIFIER

THS7530
SLOS405C – DECEMBER 2002 – REVISED FEBRUARY 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PART NUMBER
THS7530PWP
THS7530PWPR
PACKAGING/ORDERING INFORMATION⁽¹⁾
PACKAGE TYPE
PACKAGE MARKING
TRANSPORT MEDIA, QUANTITY
TSSOP-14-PP
THS7530
Rails, 90
Tape and Reel, 2000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range, unless otherwise noted.
V_S+ – V_S–
V_I
I_O
V_ID
T_J
T_stg
Supply voltage
Input voltage
Output current
Differential input voltage
Continuous power dissipation
Maximum junction temperature
Maximum junction temperature for long term stability⁽²⁾
Storage temperature range
HBM
ESD CDM
MM
THS7530
5.5 V
±V_S
65 mA
±4 V
See Dissipation Rating Table
+150°C
+125°C
–65°C to +150°C
3000 V
1500 V
200 V
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
PACKAGE THERMAL DATA
PACKAGE
PWP (14-pin)⁽³⁾
PCB
See Layout Considerations in the Application section of this data sheet.
q_JA
(°C/W)
37.5
q_JC
(°C/W) ⁽¹⁾
2.07
T_A = 25°C
POWER RATING⁽²⁾
3W
(1) This data was taken using the JEDEC High-K test printed circuit board (PCB).
(2) This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 in x 3 in PCB.
(3) The THS7530 incorporates a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the PowerPAD
thermally enhanced package.
RECOMMENDED OPERATING CONDITIONS
[V_S- to V_S+]
T_A
Supply voltage
Operating free-air temperature
Input common mode voltage
Output common mode voltage
TEST CONDITIONS
[V_S- to V_S+] = 5 V
[V_S- to V_S+] = 5 V
MIN TYP MAX UNIT
4.5
5 5.5 V
–40
+85 °C
2.5
V
2.5
V
2
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