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LP124 Datasheet, PDF (2/10 Pages) National Semiconductor (TI) – Micropower Quad Operational Amplifier
Absolute Maximum Ratings
If Military Aerospace specified devices are required
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Supply Voltage
LP2902
32V or g 16V
26V or g 13V
Differential Input Voltage
32V
LP2902
26V
Input Voltage (Note 1)
LP2902
b0 3V to 32V
b0 3V to 26V
Output Short-Circuit to GND
(One Amplifier) (Note 2)
Va s 15V and TA e 25 C
ESD Susceptibility (Note 9)
Continuous
g500V
Operating Conditions
Power Dissipation
(Note 3)
J
500 mW
Package
N
500 mW
M
500 mW
Tj Max
ija
Operating Temp Range
150 C
90 C W
(Note 4)
150 C
90 C W
(Note 4)
150 C
140 C W
(Note 4)
Storage Temp Range
b65 C s T s 150 C
Soldering
Information (10 sec )
Vapor Phase (60 sec )
Infrared (15 sec )
300 C
260 C
215 C
220 C
Electrical Characteristics (Note 5)
Symbol Parameter
Conditions
LP124
Tested
Typ Limit
(Note 6)
Design
Limit
(Note 7)
LP2902 (Note 8)
Tested
Typ Limit
(Note 6)
Design
Limit
(Note 7)
LP324
Tested Design
Typ Limit
Limit
(Note 6) (Note 7)
Units
Limits
Vos
Input Offset
Voltage
1
2
4
7
2
4
10
2
4
9
mV
(Max)
Ib
Input Bias
Current
1
4
8
8
2 20
40
2 10
20
nA
(Max)
Ios
Input Offset
Current
01 1
2
2
05 4
8
02 2
4
nA
(Max)
Avol Voltage
Gain
RL e 10k
to GND
Va e 30V
100 70
60
60
70 40
30 100 50
40 V mV
(Min)
CMRR Common
Mode Rej
Ratio
Va e 30V
100 85
0V s Vcm
80
Vcm k Vab 1 5
PSRR Power
Va e 5V to 30V 100 85
Supply Rej
80
Ratio
75
90 80
75
90 80
75
90 80
75
90 80
75
dB
(Min)
75
dB
(Min)
Is
Supply
RL e %
Current
85 125
150
200 85 150
250 85 150
250
mA
(Max)
Vo
Output
Voltage
Swing
Iout
Output
Source Source
Current
IL e 350 mA
to GND
Vcm e 0V
IL e 350 mA
to Va
Vcm e 0V
Vo e 3V
Vin (diff) e 1V
3 6 3 4 Vab1 9V 3 6
31
07 08
10
11 9
4
10 07
4
10
3 4 Vab1 9V 3 6
08
10 07
7
4
10
3 4 Vab1 9V V
(Min)
08
10
V
(Max)
7
4
mA
(Min)
Iout
Sink
Output
Sink
Current
Vo e 1 5V
6
5
Vin (diff) e 1V
4
4
5
4
3
5
4
3
mA
(Min)
Iout
Output
Sink Sink
Current
Vo e 1 5V
Vcm e 0V
5
3
05
15
4
2
1
4
2
1
mA
(Min)
Isource Output
Vin (diff) e 1V 20 25
Short to GND
35
35
20 25
35
35
20 25
35
35
mA
(Max)
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