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DS90LV018A_05 Datasheet, PDF (2/9 Pages) National Semiconductor (TI) – 3V LVDS Single CMOS Differential Line Receiver
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (VCC)
−0.3V to +4V
Input Voltage (RIN+, RIN−)
−0.3V to +3.9V
Output Voltage (ROUT)
−0.3V to (VCC + 0.3V)
Maximum Package Power Dissipation @ +25˚C
M Package
1025 mW
Derate M Package
8.2 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range Soldering
(4 sec.)
+260˚C
Maximum Junction Temperature
ESD Rating (Note 4)
(HBM 1.5 kΩ, 100 pF)
(EIAJ 0Ω, 200 pF)
+150˚C
≥ 7 kV
≥ 500 V
Recommended Operating
Conditions
Min Typ Max
Supply Voltage (VCC)
Receiver Input Voltage
+3.0 +3.3 +3.6
GND
3.0
Operating Free Air
Temperature (TA)
−40 25 +85
Units
V
V
˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol
Parameter
Conditions
Pin Min
VTH
Differential Input High Threshold VCM = +1.2V, 0V, 3V (Note 11)
VTL
Differential Input Low Threshold
IIN
Input Current
VIN = +2.8V VCC = 3.6V or 0V
VIN = 0V
VIN = +3.6V VCC = 0V
VOH
Output High Voltage
IOH = −0.4 mA, VID = +200 mV
IOH = −0.4 mA, Inputs terminated
IOH = −0.4 mA, Inputs shorted
VOL
Output Low Voltage
IOL = 2 mA, VID = −200 mV
IOS
Output Short Circuit Current
VOUT = 0V (Note 5)
VCL
Input Clamp Voltage
ICL = −18 mA
ICC
No Load Supply Current
Inputs Open
RIN+,
RIN−
ROUT
−100
−10
−10
-20
2.7
2.7
2.7
−15
−1.5
VCC
Typ
±1
±1
3.1
3.1
3.1
0.3
−50
−0.8
5.4
Max
+100
+10
+10
+20
0.5
−100
9
Units
mV
mV
µA
µA
µA
V
V
V
V
mA
V
mA
Switching Characteristics
VCC = +3.3V ± 10%, TA = −40˚C to +85˚C (Notes 6, 7)
Symbol
Parameter
tPHLD
tPLHD
tSKD1
tSKD3
tSKD4
tTLH
tTHL
fMAX
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Pulse Skew |tPHLD − tPLHD| (Note 8)
Differential Part to Part Skew (Note 9)
Differential Part to Part Skew (Note 10)
Rise Time
Fall Time
Maximum Operating Frequency (Note 12)
Conditions
Min Typ Max Units
CL = 15 pF
1.0 1.6 2.5 ns
VID = 200 mV
1.0 1.7 2.5 ns
(Figure 1 and Figure 2) 0
50 400 ps
0
1.0 ns
0
1.5 ns
325 800 ps
225 800 ps
200 250
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground unless otherwise
specified (such as VID).
Note 3: All typicals are given for: VCC = +3.3V and TA = +25˚C.
Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF) ≥ 7 kV
EIAJ (0Ω, 200 pF) ≥ 500V
Note 5: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not
exceed maximum junction temperature specification.
Note 6: CL includes probe and jig capacitance.
Note 7: Generator waveform for all tests unless otherwise specified: f = 1 MHz, ZO = 50Ω, tr and tf (0% to 100%) ≤ 3 ns for RIN.
Note 8: tSKD1 is the magnitude difference in differential propagation delay time between the positive-going-edge and the negative-going-edge of the same channel.
Note 9: tSKD3, part to part skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices at the same VCC
and within 5˚C of each other within the operating temperature range.
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