DS90LV011AH Datasheet, PDF (2/5 Pages) National Semiconductor (TI) – HIGH TEMPERATURE 3V LVDS DIFFERENTIAL DRIVER

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_DD)
LVCMOS input voltage (TTL IN)
−0.3V to +4V
−0.3V to +3.6V
LVDS output voltage (OUT±)
−0.3V to +3.9V
LVDS output short circuit current
24mA
Maximum Package Power Dissipation @ +25˚C
MF Package
902 mW
Derate MF Package
7.22 mW/˚C above +25˚C
Thermal resistance (θ_JA)
Storage Temperature
138.5˚C/Watt
−65˚C to +150˚C
Lead Temperature Range Soldering
(4 sec.)
+260˚C
Maximum Junction
Temperature
ESD Ratings
HBM (1.5 kΩ, 100 pF)
EIAJ (0 Ω, 200 pF)
CDM (0 Ω, 0 pF)
IEC direct (330 Ω, 150 pF)
+150˚C
≥ 9kV
≥ 900V
≥ 2000V
≥ 4kV
Recommended Operating
Conditions
Supply Voltage (V_DD)
Temperature (T_A)
Min Typ Max Units
3.0 3.3 3.6
V
−40 +25 +125 ˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 8)
Symbol
|V_OD|
∆V_OD
V_OS
∆V_OS
I_OFF
I_OS
I_OSD
C_OUT
V_IH
V_IL
I_IH
I_IL
V_CL
C_IN
I_DD
Parameter
Output Differential Voltage
V_OD Magnitude Change
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
(Note 4)
Differential Output Short Circuit
Current (Note 4)
Output Capacitance
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input Clamp Voltage
Input Capacitance
Power Supply Current
Conditions
R_L = 100Ω
(Figure 1 and Figure 2)
R_L = 100Ω
(Figure 1)
V_OUT = 3.6V or GND, V_DD = 0V
V_OUT+ and V_OUT− = 0V
V_OD = 0V
V_IN = 3.3V or 2.4V
V_IN = GND or 0.5V
I_CL = −18 mA
No Load
R_L = 100Ω
V_IN = V_DD or GND
Pin
OUT+,
OUT−
Min
250
1.125
0
TTL IN 2.0
GND
−1.5
V_DD
Typ
350
3
1.22
1
±1
−6
−5
3
±2
±1
−0.6
3
5
7
Max
450
35
1.375
25
±10
−24
−12
V_DD
0.8
±10
±10
8
10
Units
mV
mV
V
mV
µA
mA
mA
pF
V
V
µA
µA
V
pF
mA
mA
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 5, 6, 7)
Symbol
Parameter
Conditions
Min Typ
t_PHLD
t_PLHD
t_SKD1
t_SKD3
t_SKD4
t_TLH
t_THL
f_MAX
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Pulse Skew |t_PHLD − t_PLHD| (Note 9)
Differential Part to Part Skew (Note 10)
Differential Part to Part Skew (Note 11)
Transition Low to High Time
Transition High to Low Time
Maximum Operating Frequency (Note 12)
R_L = 100Ω, C_L = 15 pF
(Figure 3 and Figure 4)
0.3
1.0
0.3
1.1
0
0.1
0
0.2
0
0.4
0.2
0.5
0.2
0.5
200
250
Max Units
1.5
ns
1.5
ns
0.7
ns
1.0
ns
1.2
ns
1.0
ns
1.0
ns
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V_OD.
Note 3: All typicals are given for: V_DD = +3.3V and T_A = +25˚C.
www.national.com
2