DS90CR216A_04 Datasheet, PDF (2/13 Pages) National Semiconductor (TI) – +3.3V Rising Edge Data Strobe LVDS Receiver 28-Bit Channel Link-66 MHz, +3.3V Rising Edge Strobe LVDS Receiver 21-Bit Channel Link-66 MHz

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_CC)
CMOS/TTL Output Voltage
LVDS Receiver Input Voltage
Junction Temperature
−0.3V to +4V
−0.3V to (V_CC + 0.3V)
−0.3V to (V_CC + 0.3V)
+150˚C
Storage Temperature
−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec)
+260˚C
Maximum Package Power Dissipation Capacity @ 25˚C
MTD56 (TSSOP) Package:
DS90CR286AMTD
1.61 W
MTD48 (TSSOP) Package:
DS90CR216AMTD
1.89 W
Package Derating:
DS90CR286AMTD
DS90CR216AMTD
ESD Rating
(HBM, 1.5 kΩ, 100 pF)
(EIAJ, 0Ω, 200 pF)
12.4 mW/˚C above +25˚C
15 mW/˚C above +25˚C
> 7 kV
> 700V
Recommended Operating
Conditions
Supply Voltage (V_CC)
Operating Free Air
Temperature (T_A)
Receiver Input Range
Supply Noise Voltage
(V_CC)
Min Nom Max Units
3.0 3.3 3.6 V
−40 +25 +85 ˚C
0
2.4 V
100 mV_PP
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
CMOS/TTL DC SPECIFICATIONS (For PowerDown Pin)
V_IH
High Level Input Voltage
V_IL
Low Level Input Voltage
V_CL
Input Clamp Voltage
I_IN
Input Current
CMOS/TTL DC SPECIFICATIONS
I_CL = −18 mA
V _IN = 0.4V, 2.5V or V_CC
V _IN = GND
V_OH
High Level Output Voltage
V_OL
Low Level Output Voltage
I_OS
Output Short Circuit Current
LVDS RECEIVER DC SPECIFICATIONS
I_OH = −0.4 mA
I_OL = 2 mA
V_OUT = 0V
V_TH
Differential Input High Threshold
V_TL
Differential Input Low Threshold
I _IN
Input Current
RECEIVER SUPPLY CURRENT
V _CM = +1.2V
V _IN = +2.4V, V_CC = 3.6V
V _IN = 0V, V_CC = 3.6V
ICCRW
ICCRW
ICCRW
ICCRW
Receiver Supply Current Worst Case
Receiver Supply Current Worst Case
Receiver Supply Current Worst Case
Receiver Supply Current Worst Case
C_L = 8 pF, Worst Case
Pattern, DS90CR286A
(Figures 1, 2 ),
T_A=−10˚C to +70˚C
C_L = 8 pF, Worst Case
Pattern, DS90CR286A
(Figures 1, 2 ),
T_A=−40˚C to +85˚C
C_L = 8 pF, Worst Case
Pattern, DS90CR216A
(Figures 1, 2 ),
T_A=−10˚C to +70˚C
C_L = 8 pF, Worst Case
Pattern, DS90CR216A
(Figures 1, 2 ),
T_A=−40˚C to +85˚C
f = 33 MHz
f = 37.5 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
f = 33 MHz
f = 37.5 MHz
f = 66 MHz
f = 40 MHz
f = 66 MHz
Min Typ Max Units
2.0
GND
V_CC
V
0.8
V
−0.79 −1.5
V
+1.8 +10
µA
−10
0
µA
2.7 3.3
V
0.06 0.3
V
−60 −120 mA
−100
+100 mV
mV
±10
µA
±10
µA
49
65
mA
53
70
mA
81 105
mA
53
70
mA
81 105
mA
49
55
mA
53
60
mA
78
90
mA
53
60
mA
78
90
mA
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