DS14C238 Datasheet, PDF (2/5 Pages) National Semiconductor (TI) – Single Supply TIA/EIA-232 4 x 4 Driver/Receiver

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_CC)
V+ Pin
V− Pin
−0.3V to +6V
(V_CC −0.3V) to +15V
+0.3V to −15V
Driver Input Voltage
Driver Output Voltage
−0.3V to (V_CC +0.3V)
(V+ +0.3V) to (V−
−0.3V)
Receiver Input Voltage
±30V
Receiver Output Voltage
Junction Temperature
−0.3V to (V_CC +0.3V)
+150˚C
Maximum Package Power Dissipation @ +25˚C (Note 6)
WM Package
1400 mW
Storage Temp. Range
−65˚C to +150˚C
Lead Temp.
(Soldering, 4 Seconds)
Short Circuit Duration
(D_OUT)
ESD Rating
(HBM, 1.5 kΩ, 100 pF)
+260˚C
Continuous
≥ 2.0 kV
Recommended Operating
Conditions
Min
Supply Voltage, V_CC 4.5
Operating Free Air Temp. (T_A)
DS14C238
0
Max
5.5
+70
Units
V
˚C
Electrical Characteristics (Note 2)
Over recommended operating conditions, unless otherwise specified.
Symbol
Parameter
Conditions
DEVICE CHARACTERISTICS
V+
Positive Power Supply
V−
Negative Power Supply
I_CC
Supply Current (V_CC)
DRIVER CHARACTERISTICS
R_L = 3 kΩ, C1–C4 = 1.0 µF, D_IN = 0.8V
R_L = 3 kΩ, C1–C4 = 1.0 µF, D_IN = 2.0V
No Load
V_IH
V_IL
I_IH
I_IL
V_OH
V_OL
I_OS+
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
High Level Output Voltage
Low Level Output Voltage
Output High Short
Circuit Current
V_IN ≥ 2.0V
V_IN ≤ 0.8V
R_L = 3 kΩ
V_O = 0V, V_IN = 0.8V
(Note 3)
I_OS−
Output Low Short
Circuit Current
V_O = 0V, V_IN = 2.0V
R_O
Output Resistance
RECEIVER CHARACTERISTICS
−2V ≤ V_O ≤ +2V, V_CC = GND = 0V
V_TH
Input High Threshold
Voltage
V_TL
Input Low Threshold
Voltage
V_HY
Hysteresis
R_IN
Input Resistance
I_IN
Input Current
V_IN = +15V
V_IN = +3V
V_IN = −3V
V_IN = −15V
V_OH
High Level Output Voltage
V_IN = −3V, I_O = −3.2 mA
V_IN = −3V, I_O = −20 µA
V_OL
Low Level Output Voltage
V_IN = +3V, I_O = +2.0 mA
Min Typ Max Units
9.0
V
−8.0
V
7.0
10
mA
2.0
GND
V_CC
V
0.8
V
−10
+10
µA
−10
+10
µA
5.0 7.4
V
−6.3 −5.0
V
−30 −15 −5.0
mA
5.0 12
30
mA
300
Ω
1.9
2.4
V
0.8 1.5
V
0.2 0.4
1.0
V
3.0 4.5
7.0
kΩ
2.14 3.8
5.0
mA
0.43 0.6 +1.0
mA
−1.0 −0.6 −0.43 mA
−5.0 −3.8 −2.14 mA
3.5 4.5
V
4.0 4.9
V
0.25 0.4
V
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