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THS4501 Datasheet, PDF (1/48 Pages) National Semiconductor (TI) – WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS
DGN-8 DGK-8 D-8
THS4500
THS4501
www.ti.com
SLOS350F – APRIL 2002 – REVISED OCTOBER 2011
WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS
Check for Samples: THS4500, THS4501
FEATURES
1
•23 Fully Differential Architecture
• Bandwidth: 370 MHz
• Slew Rate: 2800 V/μs
• IMD3: –90 dBc at 30 MHz
• OIP3: 49 dBm at 30 MHz
• Output Common-Mode Control
• Wide Power-Supply Voltage Range: 5 V, ±5 V,
12 V, 15 V
• Input Common-Mode Range Shifted to Include
Negative Power-Supply Rail
• Power-Down Capability (THS4500)
• Evaluation Module Available
APPLICATIONS
• High Linearity Analog-to-Digital Converter
Preamplifier
• Wireless Communication Receiver Chains
• Single-Ended to Differential Conversion
• Differential Line Driver
• Active Filtering of Differential Signals
VIN− 1
VOCM 2
VS+ 3
VOUT+ 4
8 VIN+
7 PD
6 VS−
5 VOUT−
DESCRIPTION
The THS4500 and THS4501 are high-performance
fully differential amplifiers from Texas Instruments.
The THS4500, featuring power-down capability, and
the THS4501, without power-down capability, set new
performance standards for fully differential amplifiers
with unsurpassed linearity, supporting 14-bit
operation through 40 MHz. Package options include
the SOIC-8 and the MSOP-8 with PowerPAD™ for a
smaller footprint, enhanced ac performance, and
improved thermal dissipation capability.
DEVICE (1)
THS4500/1
THS4502/3
THS4120/1
THS4130/1
THS4140/1
THS4150/1
RELATED DEVICES
DESCRIPTION
370 MHz, 2800 V/μs, VICR Includes VS–
370 MHz, 2800 V/μs, Centered VICR
3.3 V, 100 MHz, 43 V/μs, 3.7 nV/√Hz
±15 V, 150 MHz, 51 V/μs, 1.3 nV/√Hz
±15 V, 160 MHz, 450 V/μs, 6.5 nV/√Hz
±15 V, 150 MHz, 650 V/μs, 7.6 nV/√Hz
(1) Even-numbered devices feature power-down capability.
APPLICATION CIRCUIT DIAGRAM
10 pF
392 Ω
5V
5V
0.1 µF 10 µF
50 Ω
374 Ω
+
−
VS
56.2 Ω
VOCM
−+
1 µF
24.9 Ω
24.9 Ω
IN
ADC
12 Bit/80 MSps
IN
Vref
402 Ω
392 Ω
10 pF
THIRD-ORDER INTERMODULATION
DISTORTION
−62
10
−68
VS = 5 V
−74
VS = ±5 V
12
−80
−86
−92
−98
10
20 30
392 Ω
50 Ω 374 Ω
VS+
VS
2.5 V
56.2 Ω
V+OC−M
−+
402 Ω
VS−
392 Ω
40 50 60 70 80
f − Frequency − MHz
VOUT 14
800 Ω
16
90 100
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments, Incorporated.
2
All other trademarks are the property of their respective owners.
3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2002–2011, Texas Instruments Incorporated