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LMC6061_14 Datasheet, PDF (1/21 Pages) National Semiconductor (TI) – PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
LMC6061
www.ti.com
SNOS648D – NOVEMBER 1994 – REVISED MARCH 2013
PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
Check for Samples: LMC6061
FEATURES
1
2(Typical Unless Otherwise Noted)
• Low Offset Voltage: 100 µV
• Ultra Low Supply Current: 20 μA
• Operates From 4.5V to 15V Single Supply
• Ultra Low Input Bias Current: 10 fA
• Output Swing Within 10 mV of Supply Rail,
100k Load
• Input Common-mode Range Includes V−
• High Voltage Gain: 140 dB
• Improved Latchup Immunity
APPLICATIONS
• Instrumentation Amplifier
• Photodiode and Infrared Detector Preamplifier
• Transducer Amplifiers
• Hand-held Analytic Instruments
• Medical Instrumentation
• D/A Converter
• Charge Amplifier for Piezoelectric Transducers
DESCRIPTION
The LMC6061 is a precision single low offset voltage,
micropower operational amplifier, capable of
precision single supply operation. Performance
characteristics include ultra low input bias current,
high voltage gain, rail-to-rail output swing, and an
input common mode voltage range that includes
ground. These features, plus its low power
consumption, make the LMC6061 ideally suited for
battery powered applications.
Other applications using the LMC6061 include
precision full-wave rectifiers, integrators, references,
sample-and-hold circuits, and true instrumentation
amplifiers.
This device is built with TI's advanced double-Poly
Silicon-Gate CMOS process.
For designs that require higher speed, see the
LMC6081 precision single operational amplifier.
For a dual or quad operational amplifier with similar
features, see the LMC6062 or LMC6064 respectively.
PATENT PENDING
Connection Diagrams
Figure 1. 8-Pin PDIP/SOIC
Top View
Figure 2. Distribution of LMC6061 Input Offset
Voltage (TA = +25°C)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1994–2013, Texas Instruments Incorporated