BUZ385 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

BUZ 385
Electrical Characteristics, at 7] = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Reverse Diode
Inverse diode continuous forward current _Is
Tc = 25 °C
-
Inverse diode direct current,pulsed
ISM
7C = 25 °C
-
Inverse diode forward voltage
VSD
l/GS = 0 V, /F = 21 A
-
Reverse recovery time
trr
VR = 100 V, /F=/s, d/p/df = 100 A/us
-
Reverse recovery charge
Qrr
VR = 100 V, /F=/s, d/F/df = 100 A/MS
-
-
9
-
36
1.3
1.7
180
250
0.65
1.2
Unit
A
V
ns
uC