BUZ385 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BUZ 385
i, Dnc.
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N channel
Enhancement mode
FREDFET
Pin1
Pin 2
D
Pin 3
Type
BUZ 385
VDS
ID
500V 9A
^DS(on)
0.8 Q
Package
TO-218AA
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kQ
Continuous drain current
7C = 25 °C
Pulsed drain current
Tc = 25 °C
Gate source voltage
Power dissipation
Tc = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VDS
^DGR
ID
'Dpuls
VGS
^tot
T\S\Q
ftthJC
^thJA
Values
500
Unit
V
500
A
9
36
±20
125
-55... + 150
-55... + 150
<1
75
E
55/150/56
V
W
°C
K/W
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