STB12NK80Z Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™Power MOSFET

STP12NK80Z - STB12NK80Z - STW12NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS ^Drain-source
ID = 1 mA, VQS = 0
800
V
Breakdown Voltage
loss
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
MA
50
MA
•IGSS
Gate-body Leakage
Current (VDS = 0)
VQS = ± 20V
±10
MA
Ves(th) Gate Threshold Voltage
VDS = VGS, ID =100 MA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5.25 A
0.65
0.75
Q
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
9fs(D ^{Forward Transconductance VDS = 15V, ID = 5.25 A}
12
S
Ci$s
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2620
PF
CQSS
Output Capacitance
250
PF
Crss
Reverse Transfer
53
PF
Capacitance
GOSS eq, (3) ^{Equivalent Output}
Capacitance
VGS = 0V, VDS = 0V to 640V
100
PF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 400 V, ID = 5.25 A
30
ns
tr
Rise Time
RG = 4.7iiVGs = 10V
18
ns
(Resistive Load see, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 640V, ID = 10.5 A,
VGS = 10V
87
nC
14
nC
44
nC
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-off Delay Time
tf
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
Typ.
Max.
Unit
VDD = 400 V, ID = 5.25 A
70
ns
RG = 4.7£}VGs = 10 V
20
ns
(Resistive Load see, Figure 3)
VDD = 640V, ID = 10.5 A,
16
ns
RG = 4,7n, VGS = 10V
15
ns
(Inductive Load see, Figure 5)
28
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
Source-drain Current
ISDM (2) ^{Source-drain Current (pulsed)}
10.5
A
42
A
Vso(1)
trr
Qrr
IRRM
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1 0.5 A, VGS = 0
ISD =10.5 A, di/dt= 100A/US
VDD = ioov, Tj = i50°c
(see test circuit, Figure 5)
1.6
V
635
ns
5.9
MC
18.5
A
Note: 1. Pulsed: Pulse duration = 300 us, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. CQSS eq is defined as a constant equivalent capacitance giving the same charging time as COS5 when VDS increases from 0 to 80%
VDSS.