STB12NK80Z Datasheet, PDF (2/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™Power MOSFET

STP12NK80Z - STB12NK80Z - STW12NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VQS = 0)
VDGR
Drain-gate Voltage (Ros = 20 kQ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) atTc = 100°C
IDM (•) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S)
dv/dt(1)
Gate source ESD(HBM-C=100pF, R=1.5Kfi)
Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
(•) Pulse width limited by safe operating area
(1) ISD < 10.5A, di/dt <200A/us, VDD < V(BR)DSS, T, < TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
Ti
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Value
800
800
±30
10.5
6.6
42
190
1.51
6000
4.5
-55 to 150
TO-220/ D2PAK
0.66
62.5
300
TO-247
50
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 QC, ID = IAR, VDD = 50 V)
Max Value
10.5
400
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVQSO
Gate-Source Breakdown
Voltage
Test Conditions
lgs=± 1 mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
"CM
°C/W
°C
Unit
A
mJ
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
BSD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
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