BYD73 Datasheet, PDF (3/3 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
SYMBOL
PARAMETER
cd
diode capacitance
BYD73A to D
BYD73E to G
dln
maximum slope of reverse recovery
TiT
current
BYD73A to D
BYD73E to G
CONDITIONS
f = 1 MHz; VR = 0 V;
see Fig. 15
when switched from
IF = 1 A to VR > 30 V
and dlF/dt = -1 A/(is;
see Fig. 17
MIN. TYP. MAX. UNIT
-
50
-
40
- _PF
- pF
_
_
-
-
4 A/|iS
5 A/jis
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Flth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length = 10 mm
note 1
VALUE
60
120
UNIT
K/W
K/W