BYD73 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
SYMBOL
PARAMETER
IFRM
repetitive peak forward current
BYD73A to D
BYD73E to G
'FRM
repetitive peak forward current
BYD73A to D
BYD73E to G
IFSM
non-repetitive peak forward current
ERSM
Tstg
T)
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
Ttp = 55 °C; see Figs 6 and 7
Tamb = 60 °C; see Figs 8 and 9
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
L = 120 mH; Tj = Tjmax prior to
surge; inductive load switched off
ELECTRICAL CHARACTERISTICS
Tr = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
BYD73A to D
BYD73E to G
VF
forward voltage
BYD73A to D
BYD73E to G
V(BR)R
reverse avalanche breakdown
voltage
BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
IR
reverse current
trr
reverse recovery time
BYD73A to D
BYD73E to G
CONDITIONS
MIN.
IF = 1 A; TJ = Tj max;
see Figs 12 and 13
-
-
I F = 1 A;
see Figs 12 and 13
-
-
IR = 0.1 mA
55
110
165
220
275
330
440
VR = VRRMmaxI
-
see Fig. 14
VR = VRRMmax;
-
Tj = 165°C;seeFig.14
when switched from
IF = 0.5 A to IR = 1 A;
_
measured at IR = 0.25 A;
see Fig. 18
-
MIN. MAX. UNIT
-
14 A
-
15 A
-
8.5 A
-
9.5 A
25 A
—
10 mJ
-65
+175 °C
-65
+175 °C
TYP. MAX. UNIT
-
0.75 V
-
0.83 V
-
0.98 V
-
1.05 V
-
-V
-
-V
-
-V
-
-V
-
-V
-
-V
-
-V
-
1 jj.A
-
100 HA
25 ns
-
50 ns