BFQ43 Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F. POWER TRANSISTORS

V.H.F. power transistors
CHARACTERISTICS
TJ = 25 °C
Collector-emitter breakdown voltage
VBE " 0; Ic = 5 mA
Collector-emitter breakdown voltage
open base; Ic = 50 mA
Emitter-base breakdown voltage
open collector; IE = 2 mA
Collector cut-off current
VBE = O;VCE = 18 v
Second breakdown energy; L - 25 mH; f = 50 Hz
open base
RBE = 10 £2
D.C. current gain *
IC = 0,5A;VCE-5V
Collector-emitter saturation voltage *
IC= 1,5 A; IB = 0,3 A
Transition frequency at f =• 100 MHz *
-IE = 0,5 A; VCB = 13,5 V
-IE = 1,5A;VCB-13,5V
Collector capacitance at f - 1 MH7
IE = le = 0; VCB = 13,5V
Feedback capacitance at f = 1 MHz
1C =• 20 mA; VCE = 13,5V
Jl
BFQ43
BFQ43S
V(BR)CES ^>
36 V
V(BR)CEO ^>
18 V
V(BR)EBO ^>
'CES
<
4V
2 mA
ESBO
ESBR
"FE
>
0,5 mJ
>
0,5 mJ
typ. 40
10 to 80
vCEsat
f-p
*T
typ. 0,9 V
typ. 750 MHz
typ. 625 MHz
typ. 15 pF
typ. 7,3 pF