BFQ43 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F. POWER TRANSISTORS

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BFQ43
BFQ43S
V.H.F. POWER TRANSISTORS
N-P-N silicon planar epitaxial transistors intended for use in class-A, B or C operated mobile transmitters
with a nominal supply voltage of 13,5 V. The transistors are resistance stabilized and guaranteed to with-
stand severe load mismatch conditions with a supply over-voltage to 16,5 V. The BFQ43 and BFQ43S
are especially suited as driver transistors for the BLW31 in a two-stage wideband or semi-wideband
v.h.f. amplifier delivering 28 W output power.
The BFQ43 and BFQ43S have a TO-39 metal envelope with the emitter connected to the case which
enables excellent heatsinking and emitter grounding.
QUICK REFERENCE DATA
R.F. performance up to T^ = 25 °C
mode of operation _{VC\jE MHz}
c.w. class-B
c.w, class-B
13,6 175
12,5 175
PL
Gp
n
w
dB
%
4 > 12 > 65
4
typ. 12 typ. 60
n^Zj
3,2+jO,03
-
y~L
mS
53-J29
-
MECHANICAL DATA
Fig.1 TO-39/3; emitter connected to case.
Dimensions in mm
8.5
max
Maximum lead diameter is guaranteed only for 12,7 mm.
* Max. 4,9 for BFQ43S.
,-0,51
. 12,7
min
»J 7Z7813S
N.I Semi-Conductors reserves the right to change test conditions, parameter limits tind package dimensions without notice
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