BFQ42 Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F. POWER TRANSISTOR

V.H.F. power transistor
THERMAL RESISTANCE
From junction to mounting base
From junction to case
From mounting base to heatsink
CHARACTERISTICS
TJ = 25 °C
Collector-emitter breakdown voltage
VBE =0; lc - 2 mA
Collector-emitter breakdown voltage
open base; lc = 25 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE= 18V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
RBE = 10 n
D.C. current gain *
lc =0,25 A;VCE= 5 v
Collector-emitter saturation voltage*
IC = 0,75A; IB = 0,15 A
Transition frequency at f = 100 MHz *
-IE = 0,25A;VCB = 13,5V
-IE =-0,75 A ; V C B = 13,5V
Collector capacitance at f = 1 MHz
IE = ie= °; VCB= 13,5 v
Feedback capacitance at f = 1 MHz
lc = 20mA; VCE = 13,5V
l ^BFQ42
Rth j-mb
Rth j-c
Rth mb-h
= _{24 K/W}
= 29 K/W
=
3 K/W
V(BR)CES ^{> 36 V}
V(BR)CEO ^{> 18 V}
V(BR)ESO ^>
4V
'CES
<
1 mA
ESBO
ESBR
he_i p_C
> 0,5 mJ
> 0,5 mJ
typ. 30
10 to 60
vCEsat
f-r
fj
typ. 0,9 V
typ. 750 MHz
typ. 625 MHz
cc
Cre .
typ. 8,6 pF
typ. 3,8 pF