BFQ42 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F. POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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BFQ42
V.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor intended for use in class-A, 8 or C operated mobile
transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. The
BFQ42 is especially suited asa driver transistor for the BLW29 in a two-stage wideband or semi-wide-
band v.h.f. amplifier delivering 15 W output power.
It has a TO-39 metal envelope with the collector connected to the case.
QUICK REFERENCE DATA
R.F. performance up to Tamb = 25 °C; Rthc.a = 32 K/W
mode of operation _VCE
f
PL
Gp
V
MHz w
dB
%
Zj
n
mS
c.w. class- B
c.w. class-B
13,5
175 2
> 11
> 60 7,8-j4,6 22 -JIB
12,5
175 2
typ. 10,5 typ. 65
—
-
MECHANICAL DATA
Fig.1 TO 39/1; collector connectedto case.
Dimensions in mm
Maximum lead diameter is guaranteed only for 12,7 mm.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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