TIP2955 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTOR

Silicon PNP Power Transistors
TIP2955
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-30mA;lB= 0
-60
V
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage}
IC=-4A;IB=-0.4A
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage}
IC=-10A;IB=-3.3A
VBE(on) ^{Base-Emitter On Voltage}
lc= -4A ; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
-1.0
V
-3.0
V
-1.8
V
-0.7
mA
ICER
Collector Cutoff Current
VCE=-70V;RBE=100Q
-1.0
mA
ICEV
Collector Cutoff Current
VCE=-100V;VBE(OFF)=-1.5V
-5.0
mA
IEBO
Emitter Cutoff Current
VEB= -7V; lc= 0
-5.0
mA
hpE-1
DC Current Gain
lc= -4A ; VCE= -4V
20
70
hFE-2
!s/b
fi
DC Current Gain
lc=-10A;VcE=-4V
5
Second Breakdown Collector Current
with Base Forward Biased
VCE= -30V, t= 1 .Os.Nonrepetitive
3.0
Current-Gain — Bandwidth Product
lc= -0.5A ; VCE= -10V;ftest= 1 .0MHz
2.5
A
MHz
IIFE-IC Characteristics
1000
Safe Operating Area
-100
TO
o>100
o
d
d
1C-
-0.1
-0.2 -0.3 -0,5-0.7-1,0 -2.0 -3.0 -5.0-7.0-10
Collector current lc[A]
rr-30
«t n
(j
~~ -10
•^
& -5.0
1— 30
d -2.0
!-•»
= -0.5
°:8i
-0.1
-1.0
s_^
1.0 mi^
i_{00 n}
H
(•-""
s ^{'"•S *^.}
I_iI_i ___±^j, \_S,v )m«
SECONDARY BREAKDOWN LIMIT
- BONDI IMG WRE LIMIT
^,
rHERMALLIMITi»V =25"C
M
60°i;
-20 -4.0-6.0 -10 -20 -40 -60
Collector-Emitter voltage VCE[VJ