TIP2955 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTOR

c^/V
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP PowerTransistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP2955
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-
: hFE=20-70@lc = -4A
• Collector-Emitter Saturation Voltage-
:VCE(Sa,)=-1.1V(Max)@lc = -4A
• Complement to Type TIP3055
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications.
!II^I
• ^>i
-^
3
PIN 1.BA3E
2. COLLECTOR
3. EMITTER
TO-3PN package
a—
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
tu«|j/-
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VALUE UNIT
-100
V
1^{i L} 1 :
i»-
VCEO Collector-Emitter Voltage
-60
V
K
G
VEBO Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current
-7
A
PC
Collector Power Dissipation Tc-25 C
90
W
T,
Junction Tmperature
Tstg
Storage Temperature Range
150
•c
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c ^{Thermal Resistance, Junction to Case}
1.39 •c/w
Rth j-a ^{Thermal Resistance, Junction to Ambient 35.7 °c/w}
"~^~*^"^&~- j1
- -«-R -*-N _—
mm
DIM MEN MAX
A 19.90 20.10
B 15.50 15.70
L. 4.70 4.90
D 0.90 1.10
F 1,90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
0 4.90 5,10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.10
Y 1 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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