TIP161 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor
TIP161
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcE(sat)-i ^{Collector-Emitter Saturation Voltage lc=6.5A,lB=0.1A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc=10A, IB=1A}
VeE(sat) ^{Base-Emitter Saturation Voltage}
IC=6.5A,IB=0.1A
ICEO
Collector Cutoff current
VCE= 350V, IB= 0
2.8
V
2.9
V
2.2
V
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
100
mA
FIFE
DC Current Gain
lc= 4A; VCE= 2.2V
200
VF
C-E Diode Forward Voltage
IF=10A
3.5
V
Switching Times
td
Delay Time
0.3
us
tr
Rise Time
tstg
Storage Time
tf
Fall Time
Vcc = 33V, lc = 6.5A,
1.5
tp= 20 u s; Duty Cycle=S2%
2.3
2.8
us
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