TIP161 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP161
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(suS)=350V(Min)
• Low Collector-Emitter Saturation Voltage-
: VCE(sa.)= 2.9V(Max.)@ lc= 10A
APPLICATIONS
• Designed for use in automotive ignition, switching and
motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VOBO Collector-Base Voltage
350
V
VCEO ^{Collector-Emitter Voltage}
350
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
1.0
A
125
W
150
°C
-65-150 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 1.0 °c/w}
1(I
1 2 -3
.2
%
'V j^
I— iV/^— ,w — -I — I
R1 U2
'•3
2. COLL ECTOR
3. EMITFER
TO-3PhJ package
itur ^{^ -V-—.,.,„ 8—* •- C --}
4U4ir
tuQtr/-
s
If-
K
P- ••'•*••'•'
G -^H-L
.*-*-D
» --R ^-N-*-
mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90' 2.10
F 3.40 3.60
G 2.90 3.10
H 3,20 3.40
J 0.595 0.605
K _20.50 20.70
L 1.90' 2.10
N 10.89 10.91
Q ^{4.90' 5.10}
R 3.35 3.45
$ 1.995 2.005
U 5.90 6.10
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. .
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