TIP160 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,320-380V,125W)

Silicon NPN Darlington Power Transistor
TIP160
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage IC=6.5A,IB=0.1A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc= 10A, IB= 1A}
VeE(sat) ^{Base-Emitter Saturation Voltage}
IC=6.5A,IB=0.1A
ICEO
Collector Cutoff current
VCE= 320V, IB= 0
2.8
V
2.9
V
2.2
V
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
100
mA
hpE
DC Current Gain
lc= 4A; VCE= 2.2V
200
VF
C-E Diode Forward Voltage
IF= 10A
3.5
V
Switching Times
td
Delay Time
0.3
ws
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC = 33V, lc =6.5A,
1.5
us
IBI ~ -Is2~ 100mA1
tp= 20 u s; Duty Cycle^2%
2.3
us
2.8
ys