TIP160 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,320-380V,125W)

J.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
t One.
Silicon NPN Darlington Power Transistor
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TIP160
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
• VCEO(SU
• Low Col ector-Emitter Saturation Voltage
; VCE (sat)= 2.9V(Max.)@ lc= 10A
APPLICAT IONS
• Designed for use in automotive ignition, <switching and
motor cc ntrol applications.
! ^•1r-\
11
*\ '
1₂₃
^
2 .COLLECTOR
3 .B/IITTER
T0-3PN package
ABSOLUT E MAXIMUM RAT!NGS(Ta=25°(_?)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
320
V
320
V
|f
K
;** "*• •
G •*"•— L
VEBO ^{Emitter-Base Voltage}
5
V
Ic
Collector Current-Continuous
ICM
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25°C
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
15
A
1.0
A
125
W
150
'C
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 1.0 r/w}
..*. — R
mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
r 470 490
D 0.90 1.10
E _1.90 2.10
F 3,40 3.60
G 2.90 3.10
"? 7(1 ^{•j iin}
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
U 5.90 6.1 C
Y 9.90 10.K
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