TIP152 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor
TIP152
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc= 10mA, IB=0
V(BR)CBO ^{Collector-Base Breakdown Voltage}
lc= 1.0mA, IE=0
VcE(sat)-! ^{Collector-Emitter Saturation Voltage |c= 1A, IB= 10mA}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc=2A, IB= 100mA}
VcE(sat)-3 ^{Collector-Emitter Saturation Voltage lc= 5A, IB= 250mA}
VBE(sat)-1 ^{Base-Emitter Saturation Voltage}
lc=2A, IB= 100mA
VsE(sat)-2 ^{Base-Emitter Saturation Voltage}
lc= 5A, IB= 250mA
VF
C-E Diode Forward Voltage
IF=7A
IGEO
Collector Cutoff current
VCE= 400V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; lc= 0
hpE-1
DC Current Gain
lc= 2.5A; VCe= 5V
FlFE-2
DC Current Gain
lc= 5A; VCE= 5V
hpE-3
DC Current Gain
lc= 7A; VCE= 5V
COB
Collector Output Capacitance
IE=0; VCB= 10V; f= 1MHz
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC = 250V, I C = 5 . 0 A ,
Duty Cycles£2%
MIN TYP. MAX UNIT
400
V
400
V
1.5
V
1.5
V
2.0
V
2.2
V
2.3
V
3.5
V
0.25 mA
15
mA
150
50
15
150
PF
0.03
us
0.18
us
3.5
us
1.6
us