TIP152 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP152
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min.)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ lc= 5A
APPLICATIONS
• Designed for use in automotive ignition,switching and motor
control applications.
« /"%, ••
W
12?
PIN 1.BASE
2.COLLECTOR
3. BETTER
TO-220C package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
1.5
A
80
W
150
"C
Tstg ^{Storage Temperature Range}
-65-150 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.56 •c/w
« B»
,•••- ^F
!¥° ^=kby
A ~ _.1
t^JO.OCV
^.
K
t
1 j i)
H ^{G [*•}
-»
-T>'
'
-»
c 1- J
mm
m1 WIN
A 15.70
B 9.90
C 4.20
D 0.70
F 3.40
G 4.98
K 2.70
J 0.44
K 13.20
L 1.10
Q 2.70
R 2.50
S 1.29
u 6.45
V 8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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