TIP151 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor
TIP151
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc= 10mA, IB=0
V(BR)CBO ^{Collector-Base Breakdown Voltage}
lc= 1.0mA, IE=0
VcE(sat)-i ^{Collector-Emitter Saturation Voltage |c= 1A, IB= 10mA}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage} lc=2A, IB= 100mA
VcE(sat)-3 ^{Collector-Emitter Saturation Voltage lc= 5A, ls= 250mA}
VBE(sat)-1 ^{Base-Emitter Saturation Voltage}
IC=2A, IB= 100mA
VBE(sat)-2 ^{Base-Emitter Saturation Voltage}
lc= 5A, IB= 250mA
VF
C-E Diode Forward Voltage
IF=7A
ICEO
Collector Cutoff current
VCE= 350V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; lc= 0
hpE-1 DC Current Gain
lc= 2.5A; VCE= 5V
tlFE-2
DC Current Gain
lc= 5A; VCE= 5V
hFE-3
DC Current Gain
lc= 7A; VCE= 5V
COB
Collector Output Capacitance
le=0;VcB=10V;f= 1MHz
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCC = 250V, IC = 5.0A,
Duty Cycles£2%
MIN TYP. MAX UNIT
350
V
350
V
1.5
V
1.5
V
2.0
V
2.2
V
2.3
V
3.5
V
0.25 mA
15
mA
150
50
15
150
PF
0.03
us
0.18
us
3.5
us
1.6
us