TIP151 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/nc.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP151
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)ceo= 350V(Min.)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ lc= 5A
APPLICATIONS
• Designed for use in automotive ignition,switching and motor
control applications.
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TO-: 20C package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
Vcao Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25'C
T,
Junction Temperature
Tstg ^{Storage Temperature Range}
1.5
A
80
W
150
°C
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.56 'CM/
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A
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mm
DM WIN MAX
A 15.70 I5,<>0
B 9.90 10.10
C 4.20 4.40
D 0.70 0.00
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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