TIP150 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,300-400V,80W)

Silicon NPN Darlington Power Transistor
TIP150
ELECTRICAL CHARACTERISTICS
Tc=25*C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc=10mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 1.0mA, IE=0
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage lc= 1A, IB= 10mA}
VcE(sa()-2 ^{Collector-Emitter Saturation Voltage IC=2A, IB= 100mA}
vCE(sat)-3 ^{Collector-Emitter Saturation Voltage lc= 5A, IB= 250mA}
VeE(sat)-1 ^{Base-Emitter Saturation Voltage}
IC=2A, IB= 100mA
VeE(sat)-2 ^{Base-Emitter Saturation Voltage}
lc= 5A, IB= 250mA
VF
C-E Diode Forward Voltage
IF=7A
ICEO
Collector Cutoff current
VCE= 300V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; lc= 0
hpE-1
DC Current Gain
lc= 2.5A; VCE= 6V
hFE-2
DC Current Gain
lc= 5A; VCE= 5V
hFE-3
DC Current Gain
lc= 7A; VCE= 5V
COB
Collector Output Capacitance
lE=0;VCB=10V;f=1MHz
Switching Times
td
Delay Time
tr
Rise Time
tslg
Storage Time
tf
Fall Time
Vcc = 250V, lc = 5.0 A,
Duty Cycles=2%
MIN TYP. MAX UNIT
300
V
300
V
1.5
V
1.5
V
2.0
V
2.2
V
2.3
V
3.5
V
0.25
mA
15
mA
150
50
15
150
PF
0.03
us
0.18
us
3.5
us
1.6
us