TIP150 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,300-400V,80W)

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
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TIP150
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ |c= 5A
APPLICATIONS
• Designed for use in automotive ignition,switching and motor
control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO ^{Collector-Emitter Voltage}
300
V
VEBO Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
1.5
A
80
W
150
"C
Tstg
Storage Temperature Range
-65-150 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.56 r/w
1 'l i.
i 2 :•
I2
-K J-
%Wi_ l_^.,v 1 1
I3
1.BASE
2. COLLECTOR
3- EMITTER
TO-220C package
« BM
r
p
til'
i
A
r ^{! *}
*
H
M.OCV
!'•<
K
S ^^{*44- D}
1 * . . 1
- H '* K
c|
* R|-*
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 L 1.31
U 6.45 6.65
tf 8.66 8.86
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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