TIP146T Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -30mA, IB= 0
VcE(sat)-i ^{Collector-Emitter Saturation Voltage lc=-5A,lB=-10mA}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc=-10A,lB=-40mA}
VeE(sat) ^{Base-Emitter Saturation Voltage}
lc=-10A,lB=-40mA
V BE(on) ^{Base-Emitter On Voltage}
lc=-10A;VCE=-4V
ICBO
Collector Cutoff current
VCB= -80V, IE= 0
ICEO
Collector Cutoff current
VCE= -40V, IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1 DC Current Gain
lc= -5A; VCE= -4V
hFE-2
DC Current Gain
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
lc=-10A; VCE=-4V
VCC=-30V, IC=-5.0A,
lai= -Is2 = -20 rnA;
tp= 20 u s
Duty Cycle==20%
TIP146T
MIN TYP. MAX UNIT
-80
V
-2.0
V
-3.0
V
-3.5
V
-3.0
V
-1
mA
-2
mA
-2
mA
1000
500
0.15
us
0.55
us
2.5
US
2.5
MS